LOGO
Total0Items      Cart Subtotal:$0
LOGO
IRF5305PBF
IRF5305PBFReference image

Images are for reference only

Mfr. #:
IRF5305PBF
Batch:
new
Description:
Through hole P channel 55 V 31A (Tc) 110W (Tc) TO-220AB
Datasheet:
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Fittings
Available
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 31A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 60 mOhm @ 16A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 63 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 1200 pF @ 25 V
FET Function -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
IRF5305
Other product information

Advantage price,IRF5305PBF in stock can be shipped on the same day

In Stock: 40915
Qty.Unit PriceExt. Price
1+ $1.6945 $1.6945
50+ $1.3601 $68.005
100+ $1.0779 $107.79
500+ $0.9136 $456.8
1000+ $0.7442 $744.2
2000+ $0.7006 $1401.2
5000+ $0.6672 $3336
10000+ $0.6364 $6364
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
40915
Minimum:
1
MPQ:
1
Multiples:
1
Copyright © 2024-2026 Otomo Semiconductor (Shenzhen) Co., Ltd