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IMZ120R350M1HXKSA1 Original stock-wholesale price

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IMZ120R350M1HXKSA1

Manufacturer Model： IMZ120R350M1HXKSA1
Manufacturer： Infineon Technologies
Package/Specification

Product Description： SICFET N-CH 1.2KV 4.7A TO247-4

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x11.18000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	350mOhm @ 2A, 18V
Gate Charge (Qg) (Max) @ Vgs	5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 18 V

Technical Documentation
Data Book	IMZ120R350M1HXKSA1.pdf

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IMZ120R350M1HXKSA1 Original stock-wholesale price

IMZ120R350M1HXKSA1

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