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FBG10N05AC Original stock-wholesale price

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FBG10N05AC

Manufacturer Model： FBG10N05AC
Manufacturer： EPC Space, LLC
Package/Specification

Product Description： GAN FET HEMT 100V5A COTS 4FSMD-A

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x313.40000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	EPC Space, LLC
Series	-
Package	Tray
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	44mOhm @ 5A, 5V
Gate Charge (Qg) (Max) @ Vgs	2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 5 V

Technical Documentation
Data Book	FBG10N05AC.pdf

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FBG10N05AC Original stock-wholesale price

FBG10N05AC

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