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TW107N65C,S1F Original stock-wholesale price

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TW107N65C,S1F

Manufacturer Model： TW107N65C,S1F
Manufacturer： Toshiba Semiconductor and Storage
Package/Specification

Product Description： G3 650V SIC-MOSFET TO-247 107MO

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x10.08000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	145mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs	5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 18 V

Technical Documentation
Data Book	TW107N65C,S1F.pdf

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TW107N65C,S1F Original stock-wholesale price

TW107N65C,S1F

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