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IMZA65R039M1HXKSA1 Original stock-wholesale price

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IMZA65R039M1HXKSA1

Manufacturer Model： IMZA65R039M1HXKSA1
Manufacturer： Infineon Technologies
Package/Specification

Product Description： SILICON CARBIDE MOSFET, PG-TO247

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x20.64000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	50mOhm @ 25A, 18V
Gate Charge (Qg) (Max) @ Vgs	5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 18 V

Technical Documentation
Data Book	IMZA65R039M1HXKSA1.pdf

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IMZA65R039M1HXKSA1 Original stock-wholesale price

IMZA65R039M1HXKSA1

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