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IXTA1R6N100D2HV Original stock-wholesale price

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IXTA1R6N100D2HV

Manufacturer Model： IXTA1R6N100D2HV
Manufacturer： IXYS
Package/Specification

Product Description： MOSFET N-CH 1000V 1.6A TO263HV

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x4.99000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	Depletion
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Gate Charge (Qg) (Max) @ Vgs	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V

Technical Documentation
Data Book	IXTA1R6N100D2HV.pdf

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IXTA1R6N100D2HV Original stock-wholesale price

IXTA1R6N100D2HV

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