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IPD90R1K2C3ATMA2 Original stock-wholesale price

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IPD90R1K2C3ATMA2

Manufacturer Model： IPD90R1K2C3ATMA2
Manufacturer： Infineon Technologies
Package/Specification

Product Description： MOSFET N-CH 900V 2.1A TO252-3

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x1.05962（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.8A, 10V
Gate Charge (Qg) (Max) @ Vgs	3.5V @ 0.31mA
Gate Charge (Qg) (Max) @ Vgs	3.2 nC @ 10 V

Technical Documentation
Data Book	IPD90R1K2C3ATMA2.pdf

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IPD90R1K2C3ATMA2 Original stock-wholesale price

IPD90R1K2C3ATMA2

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