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TP65H050G4WS Original stock-wholesale price

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TP65H050G4WS

Manufacturer Model： TP65H050G4WS
Manufacturer： Transphorm
Package/Specification

Product Description： 650 V 34 A GAN FET

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x15.64000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Transphorm
Series	SuperGaN®
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V

Technical Documentation
Data Book	TP65H050G4WS.pdf

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TP65H050G4WS Original stock-wholesale price

TP65H050G4WS

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