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MSCSM120SKM31CTBL1NG Original stock-wholesale price

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MSCSM120SKM31CTBL1NG

Manufacturer Model： MSCSM120SKM31CTBL1NG
Manufacturer： Microchip Technology
Package/Specification

Product Description： PM-MOSFET-SIC-SBD-BL1

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x125.80000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Microchip Technology
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	79A
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 20 V

Technical Documentation
Data Book	MSCSM120SKM31CTBL1NG.pdf

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MSCSM120SKM31CTBL1NG Original stock-wholesale price

MSCSM120SKM31CTBL1NG

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