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GCMS080B120S1-E1 Original stock-wholesale price

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GCMS080B120S1-E1

Manufacturer Model： GCMS080B120S1-E1
Manufacturer： SemiQ
Package/Specification

Product Description： SIC 1200V 80M MOSFET & 10A SBD S

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x25.96000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	SemiQ
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 20 V

Technical Documentation
Data Book	GCMS080B120S1-E1.pdf

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GCMS080B120S1-E1 Original stock-wholesale price

GCMS080B120S1-E1

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