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SCTH70N120G2V-7 Original stock-wholesale price

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SCTH70N120G2V-7

Manufacturer Model： SCTH70N120G2V-7
Manufacturer： STMicroelectronics
Package/Specification

Product Description： SILICON CARBIDE POWER MOSFET 120

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x47.17000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	STMicroelectronics
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status	Active
Product Status	Active
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Rds On (Max) @ Id, Vgs	18V
Rds On (Max) @ Id, Vgs	30mOhm @ 50A, 18V

Technical Documentation
Data Book	SCTH70N120G2V-7.pdf

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SCTH70N120G2V-7 Original stock-wholesale price

SCTH70N120G2V-7

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