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IPD122N10N3GATMA1 Original stock-wholesale price

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IPD122N10N3GATMA1

Manufacturer Model： IPD122N10N3GATMA1
Manufacturer： Infineon Technologies
Package/Specification

Product Description： MOSFET N-CH 100V 59A TO252-3

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x1.86000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status	Active
Product Status	Active
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
Rds On (Max) @ Id, Vgs	6V, 10V
Rds On (Max) @ Id, Vgs	12.2mOhm @ 46A, 10V

Technical Documentation
Data Book	IPD122N10N3GATMA1.pdf

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IPD122N10N3GATMA1 Original stock-wholesale price

IPD122N10N3GATMA1

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