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SCTWA10N120 Original stock-wholesale price

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STMicroelectronics SCTWA10N120

Manufacturer Model： SCTWA10N120
Manufacturer： STMicroelectronics
Package/Specification

Product Description： IC POWER MOSFET 1200V HIP247

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	STMicroelectronics
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	690mOhm @ 6A, 20V
Gate Charge (Qg) (Max) @ Vgs	3.5V @ 250µA (Typ)
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 20 V

Technical Documentation
Data Book	SCTWA10N120.pdf

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SCTWA10N120 Original stock-wholesale price

STMicroelectronics SCTWA10N120

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