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BSM180C12P2E202 Original stock-wholesale price

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BSM180C12P2E202

Manufacturer Model： BSM180C12P2E202
Manufacturer： Rohm Semiconductor
Package/Specification

Product Description： SICFET N-CH 1200V 204A MODULE

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x720.00000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

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I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Rohm Semiconductor
Series	-
Package	Tray
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs (Max)	4V @ 35.2mA
Vgs (Max)	+22V, -6V

Technical Documentation
Data Book	BSM180C12P2E202.pdf

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BSM180C12P2E202 Original stock-wholesale price

BSM180C12P2E202

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