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IMBG120R090M1HXTMA1 Original stock-wholesale price

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IMBG120R090M1HXTMA1

Manufacturer Model： IMBG120R090M1HXTMA1
Manufacturer： Infineon Technologies
Package/Specification

Product Description： SICFET N-CH 1.2KV 26A TO263

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x14.13000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

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I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status	Active
Product Status	Active
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Vgs(th) (Max) @ Id	125mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id	5.7V @ 3.7mA

Technical Documentation
Data Book	IMBG120R090M1HXTMA1.pdf

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IMBG120R090M1HXTMA1 Original stock-wholesale price

IMBG120R090M1HXTMA1

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