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SCT2450KEGC11 Original stock-wholesale price

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SCT2450KEGC11

Manufacturer Model： SCT2450KEGC11
Manufacturer： Rohm Semiconductor
Package/Specification

Product Description： 1200V, 10A, THD, SILICON-CARBIDE

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x12.42000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Rohm Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	585mOhm @ 3A, 18V
Gate Charge (Qg) (Max) @ Vgs	4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 18 V

Technical Documentation
Data Book	SCT2450KEGC11.pdf

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SCT2450KEGC11 Original stock-wholesale price

SCT2450KEGC11

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