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TPW2900ENH,L1Q Original stock-wholesale price

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TPW2900ENH,L1Q

Manufacturer Model： TPW2900ENH,L1Q
Manufacturer： Toshiba Semiconductor and Storage
Package/Specification

Product Description： PB-F POWER MOSFET TRANSISTOR DSO

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x1.44450（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	29mOhm @ 16.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V

Technical Documentation
Data Book	TPW2900ENH,L1Q.pdf

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TPW2900ENH,L1Q Original stock-wholesale price

TPW2900ENH,L1Q

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