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BSC120N03LSG Original stock-wholesale price

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Infineon Technologies BSC120N03LSG

Manufacturer Model： BSC120N03LSG
Manufacturer： Infineon Technologies
Package/Specification

Product Description： POWER FIELD-EFFECT TRANSISTOR, 1

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V

Technical Documentation
Data Book	BSC120N03LSG.pdf

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BSC120N03LSG Original stock-wholesale price

Infineon Technologies BSC120N03LSG

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