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IPD082N10N3GBTMA1 Original stock-wholesale price

Infineon Technologies IPD082N10N3GBTMA1

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Infineon Technologies IPD082N10N3GBTMA1

Manufacturer Model: IPD082N10N3GBTMA1
Manufacturer: Infineon Technologies
Package/Specification
Product Description:
MOSFET N-CH 100V 80A TO252-3
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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Advantage spot
  • 4-11404-2

    4-11404-2

  • T3477-018

    T3477-018

  • SBM51214G

    SBM51214G

  • I-2X12FOM3LM-CAS-MA

    I-2X12FOM3LM-CAS-MA

  • I-2X12FOM3LM-CAS-MB

    I-2X12FOM3LM-CAS-MB

  • I-2X12FOM3LM-CAS-FA

    I-2X12FOM3LM-CAS-FA

  • Product Classification

    Transistors - FETs, MOSFETs - Single

    Mfr

    Infineon Technologies

    Series

    OptiMOS™

    Package

    Tape & Reel (TR)

    Product Status

    Obsolete

    FET Type

    N-Channel

    Technology

    MOSFET (Metal Oxide)

    Drain to Source Voltage (Vdss)

    100 V

    Current - Continuous Drain (Id) @ 25°C

    80A (Tc)

    Drive Voltage (Max Rds On, Min Rds On)

    6V, 10V

    Rds On (Max) @ Id, Vgs

    8.2mOhm @ 73A, 10V

    Gate Charge (Qg) (Max) @ Vgs

    3.5V @ 75µA

    Gate Charge (Qg) (Max) @ Vgs

    55 nC @ 10 V

    Technical Documentation
    Data Book IPD082N10N3GBTMA1.pdf

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