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IXTD1R4N60P 11 Original stock-wholesale price

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IXYS IXTD1R4N60P 11

Manufacturer Model： IXTD1R4N60P 11
Manufacturer： IXYS
Package/Specification

Product Description： MOSFET N-CH 600V 1.4A DIE

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	PolarHV™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 700mA, 10V
Gate Charge (Qg) (Max) @ Vgs	5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V

Technical Documentation
Data Book	IXTD1R4N60P 11.pdf

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IXTD1R4N60P 11 Original stock-wholesale price

IXYS IXTD1R4N60P 11

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