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MSCSM120VR1M11CT6AG Original stock-wholesale price

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MSCSM120VR1M11CT6AG

Manufacturer Model： MSCSM120VR1M11CT6AG
Manufacturer： Microchip Technology
Package/Specification

Product Description： PM-MOSFET-SIC-SBD-SP6C

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x602.72000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - FETs, MOSFETs - Arrays
Mfr	Microchip Technology
Series	-
Package	Bulk
Product Status	Active
FET Type	2 N Channel (Phase Leg)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	251A (Tc)
Rds On (Max) @ Id, Vgs	10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id	2.8V @ 9mA
Input Capacitance (Ciss) (Max) @ Vds	696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	9000pF @ 1000V

Technical Documentation
Data Book	MSCSM120VR1M11CT6AG.pdf

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MSCSM120VR1M11CT6AG Original stock-wholesale price

MSCSM120VR1M11CT6AG

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