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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > >>

GE12050EEA3 Original stock-wholesale price

GE12050EEA3

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GE12050EEA3

Manufacturer Model: GE12050EEA3
Manufacturer: GE Aerospace
Package/Specification
Product Description:
1200V 475A 6-Pack SiC Module
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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  • Product Classification

    Transistors - FETs, MOSFETs - Arrays

    Mfr

    GE Aerospace

    Series

    SiC Power

    Package

    Bulk

    Product Status

    Active

    FET Type

    6 N-Channel (3-Phase Bridge)

    FET Feature

    Silicon Carbide (SiC)

    Drain to Source Voltage (Vdss)

    1200V (1.2kV)

    Current - Continuous Drain (Id) @ 25°C

    475A (Tc)

    Rds On (Max) @ Id, Vgs

    4.4mOhm @ 475A, 20V

    Vgs(th) (Max) @ Id

    4.5V @ 160mA

    Input Capacitance (Ciss) (Max) @ Vds

    1248nC @ 18V

    Input Capacitance (Ciss) (Max) @ Vds

    29300pF @ 600V

    Technical Documentation
    Data Book GE12050EEA3.pdf

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