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RN1111MFV,L3F Original stock-wholesale price

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RN1111MFV,L3F

Manufacturer Model： RN1111MFV,L3F
Manufacturer： Toshiba Semiconductor and Storage
Package/Specification

Product Description： TRANS PREBIAS NPN 50V 0.1A VESM

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x0.02926（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

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Product Details
Technical Documentation

Product Classification	Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Power - Max	100nA (ICBO)
Power - Max	150 mW

Technical Documentation
Data Book	RN1111MFV,L3F.pdf

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RN1111MFV,L3F Original stock-wholesale price

RN1111MFV,L3F

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