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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > >>

MJD122-1G Original stock-wholesale price

MJD122-1G

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MJD122-1G

Manufacturer Model: MJD122-1G
Manufacturer: onsemi
Package/Specification
Product Description:
TRANS NPN DARL 100V 8A DPAK
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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  • Product Classification

    Transistors - Bipolar (BJT) - Single

    Mfr

    onsemi

    Series

    -

    Package

    Tube

    Product Status

    Last Time Buy

    Transistor Type

    NPN - Darlington

    Current - Collector (Ic) (Max)

    8 A

    Voltage - Collector Emitter Breakdown (Max)

    100 V

    Vce Saturation (Max) @ Ib, Ic

    4V @ 80mA, 8A

    Current - Collector Cutoff (Max)

    10µA

    DC Current Gain (hFE) (Min) @ Ic, Vce

    1000 @ 4A, 4V

    Frequency - Transition

    1.75 W

    Frequency - Transition

    4MHz

    Technical Documentation
    Data Book MJD122-1G.pdf

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