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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > >>

2N657S Original stock-wholesale price

2N657S

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2N657S

Manufacturer Model: 2N657S
Manufacturer: Microchip Technology
Package/Specification
Product Description:
POWER BJT
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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Advantage spot
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    4-11404-2

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    SBM51214G

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  • I-2X12FOM3LM-CAS-MB

    I-2X12FOM3LM-CAS-MB

  • I-2X12FOM3LM-CAS-FA

    I-2X12FOM3LM-CAS-FA

  • Product Classification

    Transistors - Bipolar (BJT) - Single

    Mfr

    Microchip Technology

    Series

    -

    Package

    Bulk

    Product Status

    Active

    Transistor Type

    NPN

    Voltage - Collector Emitter Breakdown (Max)

    40 V

    Vce Saturation (Max) @ Ib, Ic

    1.5V @ 15mA, 150mA

    Current - Collector Cutoff (Max)

    10µA (ICBO)

    DC Current Gain (hFE) (Min) @ Ic, Vce

    40 @ 150mA, 10V

    Power - Max

    600 mW

    Operating Temperature

    -

    Operating Temperature

    -65°C ~ 200°C (TJ)

    Technical Documentation
    Data Book 2N657S.pdf

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