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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > >>

2N6306T1 Original stock-wholesale price

2N6306T1

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2N6306T1

Manufacturer Model: 2N6306T1
Manufacturer: Microchip Technology
Package/Specification
Product Description:
POWER BJT
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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Advantage spot
  • 4-11404-2

    4-11404-2

  • T3477-018

    T3477-018

  • SBM51214G

    SBM51214G

  • I-2X12FOM3LM-CAS-MA

    I-2X12FOM3LM-CAS-MA

  • I-2X12FOM3LM-CAS-MB

    I-2X12FOM3LM-CAS-MB

  • I-2X12FOM3LM-CAS-FA

    I-2X12FOM3LM-CAS-FA

  • Product Classification

    Transistors - Bipolar (BJT) - Single

    Mfr

    Microchip Technology

    Series

    -

    Package

    Bulk

    Product Status

    Active

    Transistor Type

    NPN

    Current - Collector (Ic) (Max)

    8 A

    Voltage - Collector Emitter Breakdown (Max)

    250 V

    Vce Saturation (Max) @ Ib, Ic

    5V @ 2A, 8A

    Current - Collector Cutoff (Max)

    50µA

    DC Current Gain (hFE) (Min) @ Ic, Vce

    15 @ 3A, 5V

    Frequency - Transition

    125 W

    Frequency - Transition

    -

    Technical Documentation
    Data Book 2N6306T1.pdf

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