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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > >>

2SD1221-Y(Q) Original stock-wholesale price

Toshiba Semiconductor and Storage 2SD1221-Y(Q)

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Toshiba Semiconductor and Storage 2SD1221-Y(Q)

Manufacturer Model: 2SD1221-Y(Q)
Package/Specification
Product Description:
TRANS NPN 60V 3A PW-MOLD
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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  • Product Classification

    Transistors - Bipolar (BJT) - Single

    Mfr

    Toshiba Semiconductor and Storage

    Series

    -

    Package

    Bulk

    Product Status

    Obsolete

    Transistor Type

    NPN

    Current - Collector (Ic) (Max)

    3 A

    Voltage - Collector Emitter Breakdown (Max)

    60 V

    Vce Saturation (Max) @ Ib, Ic

    1V @ 300mA, 3A

    Current - Collector Cutoff (Max)

    100µA (ICBO)

    DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 500mA, 5V

    Frequency - Transition

    1 W

    Frequency - Transition

    3MHz

    Technical Documentation
    Data Book 2SD1221-Y(Q).pdf

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